IPS110N12N3G 데이터시트 - Infineon Technologies
제조사

Infineon Technologies
OptiMOS™3 Power-Transistor
FEATUREs
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen free according to IEC61249-2-21 *
• Ideal for high-frequency switching and synchronous rectification
Power Transistor (120V, 1.5A)
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PNP -2.5A -120V Middle Power Transistor
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