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IPC302N20N3
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IPC302N20N3 데이터시트 - Infineon Technologies
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OptiMOS™3 Power MOST ransistor Chip
Description
• N-channel enhancement mode
• For additional characteristic and max ratings refer to the datasheet of
IPP110N20N3 G
• AQL0.65 for visual inspection according to failure catalogue
• Electrostatic Discharge Sensitive Device according to MIL-STD883C
• Diebond: soldered or glued
• Backside metallization: NiVsystem
• Frontside metallization: AlCusystem
• Passivation: nitride(only on edge structure)
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Metal Oxide Semiconductor Field Effect Transistor ( Rev : 2013 )
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