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IPC26N12N
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Infineon Technologies
IPC26N12N 데이터시트 - Infineon Technologies
Infineon Technologies
OptiMOS™ 3 Power MOS Transistor Chip
Description
• N-channel enhancement mode
• For dynamic characterization refer to the datasheet of IPP048N12N3G
• AQL 0.65 for visual inspection according to failure catalogue
• Electrostatic Discharge Sensitive Device according to MIL-STD883C
• Die bond:soldered or glued
• Backside metallization: NiVsystem
• Frontside metallization: AlSisystem
• Passivation: nitride(only on edge structure)
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Metal Oxide Semiconductor Field Effect Transistor ( Rev : 2013 )
Infineon Technologies
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