Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF

thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS