IDB10S60C(2009) 데이터시트 - Infineon Technologies
제조사

Infineon Technologies
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHs compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
thinQ! 2G Diode designed for fast switching applications like:
• CCM PFC
• Motor Drives
2nd generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2006 )
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2006 )
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!® SiC Schottky Diode
Infineon Technologies
2nd generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Infineon Technologies