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HY62CT08081E 데이터시트 - Hynix Semiconductor

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HY62CT08081E

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12 Pages

File Size
93.5 kB

제조사
Hynix
Hynix Semiconductor 

DESCRIPTION
The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.


FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Low power consumption
• Battery backup
    - 2.0V(min.) data retention
• Standard pin configuration
    - 28 pin 600mil PDIP
    - 28 pin 330mil SOP
    - 28 pin 8x13.4 mm TSOP-I (Standard)

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