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HY62CT08081E
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Hynix Semiconductor
DESCRIPTION
The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynixs high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Low power consumption
• Battery backup
- 2.0V(min.) data retention
• Standard pin configuration
- 28 pin 600mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I (Standard)