GENERAL DESCRIPTION
The HY29LV800 is an 8 Mbit, 3 volt-only, CMOS Flash memory organized as 1,048,576 (1M) bytes or 524,288 (512K) words that is available in 44-pin PSOP, 48-pin TSOP and 48-ball FBGA packages. Word-wide data (x16) appears on DQ[15:0] and byte-wide (x8) data appears on DQ[7:0].

The HY29LV800 can be programmed and erased in-system with a single 3 volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so that the device does not require a higher voltage VPP power supply to perform those functions. The device can also be programmed in standard EPROM programmers. Access times as low as 70 ns over the full operating voltage range of 2.7 - 3.6 volts are offered for timing compatibility with the zero wait state requirements of high speed microprocessors. A 55 ns version operating from 3.0 to 3.6 volts is also available. To eliminate bus contention, the HY29LV800 has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.