HUML2020L3 데이터시트 - ROHM Semiconductor
제조사

ROHM Semiconductor
Features
1) Suitable for Middle Power Driver.
2) Low VCE(sat)
VCE(sat)=200mV(Max.).
(IC/IB=800mA/80mA)
3) High collector current.
IC=2.5A(max),ICP=5A(max)
4) Leadless small SMD package (HUML2020L3)
Excellent thermal and electrical conductivity.
APPLICATION
LOW FREQUENCY AMPLIFIER
Page Link's:
1
2
3
4
5
6
7
8
9
PNP -2.5A -120V Middle Power Transistor
ROHM Semiconductor
Middle Power Transistor (80V / 2.5A)
ROHM Semiconductor
Middle Power Transistor(120V/1.5A) ( Rev : 2016 )
ROHM Semiconductor
Middle Power Transistor(120V/1.5A)
ROHM Semiconductor
Middle Power Transistor (-80V / -2.5A)
ROHM Semiconductor
Middle Power Transistor(120V/700mA)
ROHM Semiconductor
PNP -0.7A -120V Middle Power Transistor
ROHM Semiconductor
PNP -1.5A -120V Middle Power Transistor
ROHM Semiconductor
NPN 3A 120V Power Transistor
ROHM Semiconductor
NPN 6A 30V Middle Power Transistor
ROHM Semiconductor