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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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HM62W8512BI 데이터시트 - Renesas Electronics

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HM62W8512BI

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15 Pages

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65.4 kB

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Renesas
Renesas Electronics 

Description
The Hitachi HM62W8512BI is a 4-Mbit static RAM organized 512-kword × 8-bit. HM62W8512BI Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS process technology. The HM62W8512BI Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 32-pin TSOP II.


FEATUREs
• Single 3.3 V supply: 3.3 V ± 0.3V
• Access time: 70/85 ns (max)
• Power dissipation
    - Active: 16.5 mW/MHz (typ)
    - Standby: 3.3 µW (typ)
• Completely static memory. No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state output
• Directly LV-TTL compatible: All inputs and outputs
• Battery backup operation
• Operating temperature: –40 to +85˚C

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제조사
4 M SRAM (512-kword × 8-bit)
PDF
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
PDF
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
PDF
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
PDF
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
PDF
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
PDF
Renesas Electronics
4 M SRAM (512-kword × 8-bit)
PDF
Hitachi -> Renesas Electronics
4 M SRAM (512-kword × 8-bit)
PDF
Hitachi -> Renesas Electronics
4 M SRAM (512-kword ×8-bit)
PDF
Renesas Electronics
4 M SRAM (512-kword x 8-bit)
PDF
Hitachi -> Renesas Electronics

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