HITK0202MPTL-HQ 데이터시트 - Renesas Electronics
제조사
Renesas Electronics
Features
• Low on-resistance
RDS(on) = 42 mΩ typ (VGS = 4.5 V, ID = 1.9 A)
• Low drive current
• High speed switching
• 2.5 V gate drive
Page Link's:
1
2
3
4
5
6
7
20V, 4.5A, 39mΩmax. Silicon N Channel MOS FET Power Switching
Renesas Electronics
20V, 2.3A, 130mΩmax. Silicon N Channel MOS FET Power Switching
Renesas Electronics
20V, 2.9A, 90mΩmax. Silicon N Channel MOS FET Power Switching
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching
Renesas Electronics
