HITK0201MP(2011) 데이터시트 - Renesas Electronics
제조사

Renesas Electronics
Features
• Low on-resistance
RDS(on) = 25 mΩ typ (VGS = 4.5 V, ID = 2.4 A)
• Low drive current
• High speed switching
• 2.5 V gate drive
Page Link's:
1
2
3
4
5
6
7
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching ( Rev : 2011 )
Renesas Electronics
Silicon N Channel MOS FET Power Switching
Renesas Electronics
Silicon N Channel MOS FET Power Switching
Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel Power MOS FET Power Switching
Renesas Electronics