H2N5551 데이터시트 - Hi-Sincerity Microelectronics
제조사
Hi-Sincerity Microelectronics
Description
The H2N5551 is designed for amplifier transistor.
FEATUREs
• Complements to PNP Type H2N5401
• High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))
NPN Epitaxial Planar Transistor
First Components International
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
