GT50J327 데이터시트 - Toshiba
제조사

Toshiba
Current Resonance Inverter Switching Application
• Enhancement mode type
• High speed : tf = 0.19 µs (typ.) (IC = 50A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(N) (Toshiba package name)
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Toshiba