GT15J301 데이터시트 - Toshiba
제조사
Toshiba
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Third-generation IGBT
Enhancement mode type
High speed : tf = 0.30μs (Max.) (IC = 15A)
Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A)
FRD included between emitter and collector
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Toshiba
