
Giga Semiconductor
Functional Description
Applications
The GS840E18/32/36A is a 4,718,592-bit (4,194,304-bit for x32 version) high performance synchronous SRAM with a 2- bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support. The GS84018/32/36A is available in a JEDEC standard 100-lead TQFP or 119-Bump BGA package.
FEATUREs
• FT pin for user-configurable flow through or pipelined operation
• Dual Cycle Deselect (DCD) operation
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipelined mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC standard 100-lead TQFP or 119-Bump BGA package
• Pb-Free 100-lead TQFP package available