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GS8160Z36BT 데이터시트 - Giga Semiconductor

GS8160Z18BGT-150 image

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GS8160Z36BT

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23 Pages

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461.4 kB

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GSI
Giga Semiconductor 

Functional Description
The GS8160Z18/36BT is an 18Mbit Synchronous Static SRAM. GSIs NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/ single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.


FEATUREs
• NBT (No Bus Turn Around) functionality allows zero wait
    read-write-read bus utilization; Fully pin-compatible with
    both pipelined and flow through NtRAM™, NoBL™ and
    ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• LBO pin for Linear or Interleave Burst mode
• Pin compatible with 2M, 4M, and 8M devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available

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18Mb Pipelined and Flow Through Synchronous NBT SRAM
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9Mb Pipelined and Flow Through Synchronous NBT SRAM
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Giga Semiconductor
9Mb Pipelined and Flow Through Synchronous NBT SRAM
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Giga Semiconductor
9Mb Pipelined and Flow Through Synchronous NBT SRAM
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Giga Semiconductor
36Mb Pipelined and Flow Through Synchronous NBT SRAM
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Giga Semiconductor

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