GP30B120KD 데이터시트 - International Rectifier
제조사

International Rectifier
Features
• Low VCE(on) Non Punch Through (NPT) Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
• 10 μs Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode ( Rev : 2013 )
International Rectifier
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Infineon Technologies
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier