GJ1182 데이터시트 - GTM CORPORATION
제조사
GTM CORPORATION
Description
The GJ1182 is designed for medium power amplifier applications.
FEATUREs
• Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
Silicon PNP epitaxial planar transistor
Panasonic Corporation
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Cystech Electonics Corp.
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Sanken Electric co.,ltd.
Silicon PNP Epitaxial Planar Transistor
Sanken Electric co.,ltd.
Silicon PNP Epitaxial Planar Transistor
Unspecified
