Silicon Carbide Schottky Diode

FEATUREs
• Enhanced Surge and Avalanche Robustness
• Low VF for High Temperature Operation
• Superior Figure of Merit QC/IF
• Low Thermal Resistance
• Low Reverse Leakage Current
• Temperature Independent Fast Switching
• Positive Temperature Coefficient of VF
• High dV/dt Ruggedness

Advantages
• High System Reliability
• Optimal Price Performance
• Improved System Efficiency
• Reduced Cooling Requirements
• Increased System Power Density
• Zero Reverse Recovery Current
• Easy to Parallel without Thermal Runaway
• Enables Extremely Fast Switching

APPLICATIONs
• Medical Imaging
• High Voltage Sensing
• Oil Drilling
• Geothermal Instrumentation
• High Voltage Multipliers
• High Frequency Rectifiers
• High Voltage Switching
• Pulsed Power