
Lattice Semiconductor
Description
The GAL26CV12, at 7.5 ns maximum propagation delay time, combines a high performance CMOS process with Electrically Erasable (E2) floating gate technology to provide the highest performance 28-pin PLD available on the market. E2 technology offers high speed (<100ms) erase times, providing the ability to reprogram or reconfigure the device quickly and efficiently.
FEATUREs
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
— 7.5 ns Maximum Propagation Delay
— Fmax = 142.8 MHz
— 4.5ns Maximum from Clock Input to Data Output
— TTL Compatible 16 mA Outputs
— UltraMOS® Advanced CMOS Technology
• ACTIVE PULL-UPS ON ALL PINS
• LOW POWER CMOS
— 90 mA Typical Icc
• E2 CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
• TWELVE OUTPUT LOGIC MACROCELLS
— Uses Standard 22V10 Macrocells
— Maximum Flexibility for Complex Logic Designs
• PRELOAD AND POWER-ON RESET OF REGISTERS
— 100% Functional Testability
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
• ELECTRONIC SIGNATURE FOR IDENTIFICATION