Features
• Fast: Optimized for medium operating frequencies 
   (1-5 kHz in hard switching, >20 kHz in resonant mode).
• Generation 4 IGBT design provides tighter 
   parameter distribution and higher efficiency than 
   Generation 3.
• IGBT co-packaged with Hyperfast FRED diodes for ultra low
   recovery characteristics.

Benefits
• Generation 4 IGBTs offer highest efficiencies available.
• IGBTs optimized for specific application conditions.
• FRED diodes optimized for performance with IGBTs. 
   Minimized recovery characteristics require less / no 
   snubbing.
• Designed to be a "drop-in" replacement for equivalent
   industry-standard Generation 3 IR IGBTs.