G20N60HS(2009) 데이터시트 - Infineon Technologies
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Infineon Technologies
High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1 for target applications
• Complete product spectrum and PSpice Models : //www.infineon.com/igbt/
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