FZT1053A 데이터시트 - TY Semiconductor
제조사
TY Semiconductor
NPN Silicon Planar Medium Power High Gain Transistor
FEATUREs
VCEO=75V.
4.5 Amp continuous current.
10 Amp pulse current.
Low saturation voltage.
High gain.
Extremely low equivalent on-resistance; RCE(sat)=78mÙat4.5A.
NPN Silicon Planar Medium Power High Gain Transistor
TY Semiconductor
NPN Silicon Planar Medium Power High Gain Transistor
TY Semiconductor
NPN Silicon Planar Medium Power High Gain Transistor
TY Semiconductor
NPN Silicon Planar Medium Power High Gain Transistor ( Rev : V2 )
KEXIN Industrial
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Diodes Incorporated.
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Diodes Incorporated.
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Diodes Incorporated.
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Diodes Incorporated.
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ( Rev : 2007 )
Diodes Incorporated.
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Zetex => Diodes
