General Description
These dual P Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

FEATUREs
● -20V, -3A, RDS(ON) =85mΩ@VGS = -4.5V
● Improved dv/dt capability
● Fast switching
● Green Device Available
● Suit for -1.8V Gate Drive Applications

APPLICATIONs
● Notebook
● Load Switch
● Hend-Held Instruments