General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications

FEATUREs
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
• High Input Impedance
• Built-in Fast Recovery Diode

APPLICATION
   Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance