Description
The FFP08H60S is a hyperfast II diode and silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling/clamping diodes in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

FEATUREs
• Hyperfast Recovery trr = 45 ns (@ IF = 8 A)
• Max Forward Voltage, VF = 2.6 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant

APPLICATIONs
• General Purpose
• SMPS, Power Switching Circuits
• Free-Wheeling Diode for Motor Application