General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

FEATUREs
◾ rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A
◾ rDS(ON) = 15mΩ, VGS = 4.5V, ID = 35A
◾ High performance trench technology for extremely low
   rDS(ON)
◾ Low gate charge
◾ High power and current handling capability

APPLICATION
◾ DC/DC converters