General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
• Q1: N-Channel
    7.0A, 35V RDS(on) = 0.024Ω @ VGS = 10V RDS(on) = 0.032Ω @ VGS = 4.5V
• Q2: P-Channel
    –5A, –35V RDS(on) = 0.053Ω @ VGS = –10V RDS(on) = 0.087Ω @ VGS = –4.5V
• Fast switching speed
• RoHS compliant