General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

FEATUREs
■ rDS(on) = 14mΩ, VGS = 10V, ID = 10.2A
■ rDS(on) = 17mΩ, VGS = 4.5V, ID = 9.3A
■ High performance trench technology for extremely low rDS(on)
■ Low gate charge
■ High power and current handling capability
■ RoHS Compliant

APPLICATIONs
■ DC/DC converters