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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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FDFS2P753Z 데이터시트 - ON Semiconductor

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FDFS2P753Z

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ON-Semiconductor
ON Semiconductor 

Product Overview
For complete documentation, see the data sheet.
The FDFS2P753Z combines the exceptional performance of PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.


FEATUREs
• Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A
• Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A
• VF < 500mV @ 1A
• VF < 580mV @ 2A
• Schottky and MOSFET incorporated into single power surface mount S0-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility
• RoHS Compliant


APPLICATIONs
• This product is general usage and suitable for many different applications.


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제조사
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ
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Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ ( Rev : 2007 )
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Integrated P-Channel PowerTrench® MOSFET and Schottky Diode ( Rev : 2005-04 )
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Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
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Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
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Fairchild Semiconductor
Integrated P-Channel PowerTrench® MOSFET and Schottky Diode ( Rev : 2007 )
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Fairchild Semiconductor

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