General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

FEATUREs
• Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ @ VGS = – 4.5 V RDS(ON) = 82 mΩ @ VGS = – 2.5 V
• Q2 5.9 A, 20V. RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON).
• FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size

APPLICATIONs
• DC/DC converter
• Load switch
• Motor Driving