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FCP13N60N 데이터시트 - Fairchild Semiconductor

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FCP13N60N

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10 Pages

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854.5 kB

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Fairchild
Fairchild Semiconductor 

Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.


FEATUREs
• RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
• Ultra Low Gate Charge ( Typ.Qg = 30.4nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant

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