Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
FEATUREs
• 700 V @ TJ = 150°C
• Typ. RDS(on)= 23.7 Ω
• Ultra Low Gate Charge (Typ. Qg = 201 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.)= 1615 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
APPLICATIONs
• Telecom / Server Power Supplies
• Industrial Power Supplies
• UPS / Solar
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mΩ
ON Semiconductor
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mΩ
ON Semiconductor
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mΩ
ON Semiconductor
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mΩ
ON Semiconductor
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 mΩ
ON Semiconductor
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 mΩ
ON Semiconductor
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 44 A, 67 mΩ
ON Semiconductor
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mΩ ( Rev : 2022 )
ON Semiconductor
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 mΩ
ON Semiconductor
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 mΩ
ON Semiconductor