DPLS315E 데이터시트 - Diodes Incorporated.
제조사
Diodes Incorporated.
Features
• Epitaxial Planar Die Construction
• Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A
• High DC Current Gain hFE > 300 at IC = 2A
• Complementary NPN Type Available (DNLS412E)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• “Green” Device (Note 2)
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Diodes Incorporated.
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR ( Rev : 2008 )
Diodes Incorporated.
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Diodes Incorporated.
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR ( Rev : 2021 )
Diodes Incorporated.
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR ( Rev : Rev4-2 )
Diodes Incorporated.
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR ( Rev : 2021 )
Diodes Incorporated.
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Diodes Incorporated.
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR ( Rev : 2021 )
Diodes Incorporated.
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR ( Rev : 2009 )
Diodes Incorporated.
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
Diodes Incorporated.
