Description
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.

FEATUREs
• Rated to +175°C – Ideal for High Ambient Temperature
   Environments
• 100% Unclamped Inductive Switching (UIS) Test in Production –
   Ensures More Reliable and Robust End Application
• High Conversion Efficiency
• Low RDS(ON) – Minimizes On State Losses
• Low Input Capacitance
• Fast Switching Speed
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• An Automotive-Compliant Part is Available Under Separate
   Datasheet (DMTH6010LPSQ)

APPLICATIONs
• Notebook Battery Power Management
• DC-DC Converters
• Load Switch