Complementary Silicon Power Transistors

These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits.

FEATUREs
• Fast Switching - 
   tf= 90 ns (Max)
• Key Parameters Specified @ 100°C
• Low Collector-Emitter Saturation Voltage - 
   VCE(sat)= 1.0 V (Max) @ 8.0 A
• Complementary Pairs Simplify Circuit Designs