D1140 데이터시트 - Toshiba
제조사
Toshiba
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
SILICON NPN TRIPLE DIFFUSED TYPE(PCT PROCESS) TRANSISTOR
Toshiba
SILICON NPN TRANSISTOR TRIPLE DIFFUSED TYPE (PCT PROCESS)
KEC
Silicon NPN Triple Diffused Type (PCT process) Transistor ( Rev : 1997 )
Toshiba
Silicon NPN Triple Diffused Type (PCT process) Transistor
Toshiba
SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS)
Toshiba
SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS)
New Jersey Semiconductor
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Toshiba
