D1060(2008) 데이터시트 - Unisonic Technologies
제조사
Unisonic Technologies
NPN PLANAR SILICON TRANSISTOR
FEATURES
* Low collector-to-emitter saturation voltage:
VCE(SAT)=0.4V max/IC=3A, IB=0.3A
SILICON NPN PLANAR TRANSISTOR
Semelab - > TT Electronics plc
NPN SILICON PLANAR TRANSISTOR
Continental Device India Limited
NPN SILICON PLANAR TRANSISTOR
Continental Device India Limited
NPN SILICON PLANAR TRANSISTOR
New Jersey Semiconductor
NPN SILICON PLANAR TRANSISTOR
Continental Device India Limited
NPN SILICON PLANAR TRANSISTOR
Transys Electronics Limited
NPN PLANAR SILICON TRANSISTOR
Wing Shing International Group
NPN PLANAR SILICON TRANSISTOR
Wing Shing International Group
NPN PLANAR SILICON TRANSISTOR
Wing Shing International Group
NPN PLANAR SILICON TRANSISTOR
Wing Shing International Group
