Features
• High-speed, low-power, first-in, first-out (FIFO) memories
• 64 x 9 (CY7C4421V)
• 256 x 9 (CY7C4201V)
• 512 x 9 (CY7C4211V)
• 1K x 9 (CY7C4221V)
• 2K x 9 (CY7C4231V)
• 4K x 9 (CY7C4241V)
• 8K x 9 (CY7C4251V)
• High-speed 66-MHz operation (15-ns read/write cycle time)
• Low power (ICC = 20 mA)
• 3.3V operation for low power consumption and easy integration into low-voltage systems
• 5V-tolerant inputs VIH max = 5V
• Fully asynchronous and simultaneous read and write operation
• Empty, Full, and Programmable Almost Empty and Almost Full status flags
• TTL compatible
• Output Enable (OE) pin
• Independent read and write enable pins
• Center power and ground pins for reduced noise