NPN Epitaxial Planar Silicon Transistor

FEATUREs
• Adoption of MBIT processes.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• Narrow hFE range .
• Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.9mm).
• High allowable power dissipation.

APPLICATIONs
• Relay drivers, lamp drivers, motor drivers, strobes.