CPD92X 데이터시트 - Central Semiconductor
제조사

Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 9.0 x 9.0 MILS
Die Thickness 5.9 MILS
Anode Bonding Pad Area 4.8 MILS DIAMETER
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
Schottky Diode High Voltage Schottky Diode Chip
Central Semiconductor
Schottky Diode High Voltage Schottky Diode Chip
Central Semiconductor
Schottky Diode High Voltage Schottky Diode Chip
Central Semiconductor
Schottky Diode High Current Schottky Diode Chip
Central Semiconductor
Schottky Diode High Current Schottky Diode Chip
Central Semiconductor
Schottky Diode High Current Schottky Diode Chip ( Rev : 2006 )
Central Semiconductor
Schottky Diode Schottky Diode Chip
Central Semiconductor
Schottky Diode Silicon High Current Schottky Diode Chip ( Rev : 2006 )
Central Semiconductor
HIGH VOLTAGE SCHOTTKY DIODE
Advanced Power Technology
HIGH VOLTAGE SCHOTTKY DIODE
Advanced Power Technology