The CP773-CMPDM302PH is a silicon P-Channel MOSFET designed for high speed pulsed amplifi er and driver applications.

MECHANICAL SPECIFICATIONS:

   Die Size 39 x 27 MILS
   Die Thickness 7.5 MILS
   Gate Bonding Pad Size 6.5 x 6.5 MILS
   Source Bonding Pad Size 33 x 21 MILS
   Top Side Metalization Al – 40,000Å
   Back Side Metalization Ti/Ni/Ag – 1,000Å/3,000Å/10,000Å
   Scribe Alley Width 3.15 MILS
   Wafer Diameter 8 INCHES
   Gross Die Per Wafer 43,500