The CP741V-CMPT7410 die is a low VCE(SAT) silicon PNP transistor designed for high current applications.

MECHANICAL SPECIFICATIONS:

   Die Size 17.7 x 17.7 MILS
   Die Thickness 7.1 MILS
   Base Bonding Pad Size 3.8 x 3.8 MILS
   Emitter Bonding Pad Size 3.8 x 3.8 MILS
   Top Side Metalization Al-Si – 30,000Å
   Back Side Metalization Au – 9,000Å
   Scribe Alley Width 1.97 MILS
   Wafer Diameter 5 INCHES
   Gross Die Per Wafer 54,330