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CP591X
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Central Semiconductor
CP591X 데이터시트 - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 19 x 19 MILS
Die Thickness 5.9 MILS
Base Bonding Pad Area 3.5 x 4.3 MILS
Emitter Bonding Pad Area 3.5 x 4.5 MILS
Top Side Metalization Al - 13,000Å
Back Side Metalization Au - 18,000Å
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Small Signal Transistor PNP - Amp/Switch Transistor Chip ( Rev : 2006 )
Central Semiconductor
Small Signal Transistors PNP - Amp/Switch Transistor Chip ( Rev : 2006 )
Central Semiconductor
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