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CP336V
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Central Semiconductor
CP336V 데이터시트 - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
ie Size 17.3 x 17.3 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 3.9 x 3.9 MILS
Emitter Bonding Pad Area 3.9 x 3.9 MILS
Top Side Metalization Al-Si - 30,000Å
Back Side Metalization Au - 12,000Å
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