부품명
CP331
Other PDF
no available.
PDF
page
2 Pages
File Size
711.2 kB
제조사
Central Semiconductor
CP331 데이터시트 - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Die Size 39.4 x 39.4 MILS
Die Thickness 9.1 MILS
Base Bonding Pad Area 7.9 x 7.9 MILS
Emitter Bonding Pad Area 7.9 x 7.9 MILS
Top Side Metalization Al-Si - 30,000Å
Back Side Metalization Au-As - 18,000Å
부품명
상세내역
보기
제조사
Small Signal Transistor NPN- High Voltage Darlington Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - High Voltage Darlington Transistor Chip
Central Semiconductor
Share Link: 