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CP316V
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Central Semiconductor
CP316V(2005) 데이터시트 - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 20 x 20 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 4.0 x 4.0 MILS
Emitter Bonding Pad Area 4.7 x 4.7 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
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