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CP314
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Central Semiconductor
CP314(2002) 데이터시트 - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 40 x 40 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 7.9 x 8.7 MILS
Emitter Bonding Pad Area 9.0 x 14 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
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