CP312(2004) 데이터시트 - Central Semiconductor
제조사
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 70 x 70 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 11.4 x 18 MILS
Emitter Bonding Pad Area 13.7 x 23.6 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti/Ni/Ag - 11,300Å
Power Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor NPN - Amp/Switch Transistor Chip ( Rev : 2002 )
Central Semiconductor
Power Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor NPN - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor Corp
Power Transistor PNP - Amp/Switch Transistor Chip ( Rev : 2003 )
Central Semiconductor
Power Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor NPN - Amp/Switch Transistor Chip ( Rev : 2002 )
Central Semiconductor
