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CP250
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Central Semiconductor Corp
CP250 데이터시트 - Central Semiconductor Corp
Central Semiconductor Corp
Power Transistor
NPN - High Voltage Transistor Chip
PROCESS DETAILS
Die Size 99 x 69 MILS
Die Thickness 11.6 MILS
Base Bonding Pad Area 18 x 21 MILS
Emitter Bonding Pad Area 18 x 26 MILS
Top Side Metalization Al-Si - 60,000Å
Back Side Metalization Ti/Ni/Au - 5,500Å
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제조사
Small Signal Transistor NPN - High Voltage Transistor Chip ( Rev : 2010 )
Central Semiconductor
Small Signal Transistor NPN - High Voltage Transistor Chip ( Rev : 2005 )
Central Semiconductor
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